| ‘? I BYG24D thru BYG24J7 www'V'Shay'C°m Vishay General Semiconductor ELEcTRIcAL GHARAGTERISTIGS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Minimum breakdown voltage IR : 100 uA Maximum instantaneousforward voltage V Maximum reverse current Maximum reverse recovery time Note (‘J Pulse test: 300 us pulse width, 1 % duty cycle THERMAL cHARAcTERIsTIcs (TA = 25 0C unless othenuise noted) Mm JUHCNOH (0 case E E Maximum thermal resistance, junction to ambient Notes (‘J Mounted on epoxy-glass hard tissue 35 um x 17 mm2 cooper area per electrode (2) Mounted on epoxy-glass hard tissue 35 um x 50 mm? cooper area per electrode ORDERING INFORMATION (Example) UNIT WEIGHT (9) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 13“ diameter plastic tape and reel Note 1‘) AEC-O101 qualified RATINGS AND cHARAcTERIsTIcs cuRvEs (TA : 25 °C unless otherwise noted) Reverse Current (IIA) 3 Reverse Power Dissipation (mw) 25 so 75 100 125 150 25 so 75 too 125 150 Junclion Temperature (°C) Junction Temperature (“Cl Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Reverse Current vs. ‘Junction Temperature Revision: 21-Dec-11 2 Document Number: 88960 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 |